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2" / 3" evaporation system
The EVA 32 system has been specially developed for the growth of metal and silicon alloys (i.e. elements sublimating at very high temperatures). The UHV epitaxy chamber is equipped with two electron beam evaporating guns, one of which can be multi-crucible, and can take up to four solid source cells or gas injectors. The beam fluxes produced by the electron guns can be monitored by quartz film devices, by electron emission spectrometers or by a quadrupole, depending on the elements employed.
Introduction of samples is implemented by the use of a R&D transfer chamber. This configuration can integrate any of the 32 series chambers with an introduction chamber and an optional intermediate chamber (each with up to three sample storage positions and one outgassing position). This configuration is not extensible. The intermediate chamber can be fitted with surface analysis equipment and can simultaneously be connected to an AFM-STM chamber.
Key features include
State-of-the-art e-beam evaporation system
Ideal for metal and silicon alloys epi growth.
Accomodates horyzontal substrates up to 3"
Two e-beam gun ports
Four MBE source ports
In-situ characterization capability
Ease of use and maintenance
Clean room assembly and testing
Riber worldwide support.
For full specifications, please contact us email@example.com
|CdHgTe||MBE 32||MBE 32||Compact 21|
|InSb||MBE 32||MBE 32||Compact 21|
|ZnSe||MBE 32||MBE 32||Compact 21|
|GaAs||Compact 21||Compact 21||Compact 21|
|InP||Compact 21||Compact 21||Compact 21|
|GaN||Compact 21||Compact 21||Compact 21|
|Diamond||Compact 21||Compact 21|
|Metals||Eva 32||Eva 32||Eva 32|
|SiGe||Eva 32||Eva 32||Eva 32||SIVA 45|
|SIC||Compact 21||Compact 21||Eva 32||SIVA 45|
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