Valved RF-Plasma Source: 

Please contact us to find the best suitable model for your needs: webrequest@episerve.de

A revolutionary atom or radical source provides rapid and reproducible reactive Nitrogen species flow modulation and unsurpassed Nitrogen concentration uniformity over large wafers

* Allows a mechanical control over the useful range of N concentration in GaAsN while the source parameters remain constant
* Converts the directional flux of reactive Nitrogen into a nearly ideal gas at the substrate level and achieves an unsurpassed uniform Nitrogen incorporation over very large wafer or multiwafer platens
* Allows starting or stopping of the Nitrogen incorporation with no delay
* Permits use of a well degassed source at any time during the growth period
* Models adapted for Oxygen, Ammoniac, Hydrogen …
* Easy to install on any DN63CF (4.5”) or larger flange
* No time-consuming end plate exchanges needed
* Powered by standard customer and competitor electronics
* Totally eliminates ions, minimizes layer defects
* Models available for R&D and Production MBE systems

 

Compared to standard RF Plasma sources, this new source gives an easiness of control similar to the Valved Cracker cell compared to standard effusion cell.

N concentration across a 4" substrate (GaAsN1,1%)

Fig 1 : Unsurpassed uniform Nitrogen incorporation over very large wafer or multiwafer platens

Fig 2 : Mechanical control over
the useful range of N concentration in GaAsN
while the source parameters remain constant

 

Model VPRF-N-600

Valved RF Plasma source for nitrides growth

* DN40CF (2 3/4" - 70 mm) mounting flange
* 283,5 mm In-vacuum length
* Plasma observation viewport and N2 gas inlet on miniflanges
* Integrated water cooling (approx. 0,6 l / min)
* Manual RF tuning unit with cooling fan and cable (120 or 240 volts)
* Manual and/or motorized valve adjustment of reactive species flux
* Water flow meter and water switch for generator interlock

For Ammonia, Oxygen or Hydrogen use, please contact us

Power supply Controller/Generator

* 600 Watts - 13,56 MHz
* 7 m RF cable
* Order No PS600-PRF

Better than 1% uniformity achieved on a production MBE system over 4" wafer with Valved Plasma Source.