Carbon Sublimation Cell: Type BF Filament at bottom to minimize creeping effect
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A heated Pyrolitic Graphite filament generates a controlled flux of Carbon. Use of this type of doping source gives a hole concentration of between 1018 and 1020/cm3 in GaAs.
Operating principle:
Carbon doping flux is determined by the filament temperature.
The low thermal mass of the filament permits rapid adjustment of the doping
levels. The filament emission area gives an excellent lateral uniformity
for 2" and 3" substrates.
* Simplicity of operation
* Compatible with existing solid source MBE sytems
* 100% clean UHV construction.
* Non-toxic p doping
* Direct view of the C filament through integrated viewport
Hole concentration
Hole concentration at 300 K in C doped GaAs as a function of the temperature of the Carbon filament
Published results for carbon doped III -V layers
On GaAs p doping up to 3 x 1019 /cm3 . (1)
AlGaAs/GaAs/InGaAs single QW lasers. (2)
GaAs planar barrier diodes. (3)
(1). J. Nagles , et al. , J. Cryst. Growth 111 (1991) 264-268
(2). M. Micovic, et al. , Appl. Phys. Lett. 64 (1994) 411
(3). Y Anand, et al. , Proc. IEEE GaAs Reliability Workshop, Miami Beach
, Florida (1992)
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