Benefits

High graphene quality:  Single and multi-layers

Process capability: Investigation of early stage growth
Synthesis on metallic foils: Cu, Ni…
Single or batch samples
Continuous layer on wafers and foils.

Flexible processing for different applications

Fast growth and turnaround

Copper foil on susceptor

Copper coated silicon wafer

Features

Fast-response heater:  Infrared halogen lamp furnace
Thermal CVD: Single / multi layers for Graphene and hBN
Extended temperature range: Up to 1400°C
Proven Processes: Continuous or Pulsed gas flow injection
Fast thermal cycles: Short processes for higher throughput
Rapid thermal processing capability

Advanced Design

Cold-wall chamber technology: Fast cooling capability
Closed-loop infrared wafer temperature control
Accurate temperature control: Fast digital PID controller
Handling of CVD gases : CH4, C2H2, H2, etc.
Substrate holders: Quartz pins and graphite susceptors
Excellent reproducibility

Control

Full PC process control: Real time display & data collection
Easy recipe-editing: Step editor for process recipe
Robust control system: Industrial PLC and TCP/IP com.
System management tools and reports
Integrated safety interlocks

IR lamp furnaces

AS One series

AS Master series